
Epitaxy
The Center will have the capabilities of design, growth and characterization of epitaxial structures of various semiconductor groups.
The epitaxial growth capabilities will include:
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MOVPE of III/V compounds-arsenides/phosphides/antimonides
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MOVPE of nitride compounds
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2",3", 4" and 6" substrates
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MBE of III/V compounds-arsenides/phosphides/antimonides
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MBE of nitride compounds
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2",3",4" substrates
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The growth systems will have the maximum flexibility expected of R&D machines as well as the possibility of meeting pilot requirements.
The on-site characterization tools will include:
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High resolution X ray diffraction (HRXRD) mapping
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Photoluminescence (PL) mapping
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Capacitance –Voltage (CV) profiler
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Optical surface analyzer
A large variety of characterization tools at Soreq NRC and the Ben Gurion Nano Technology Center will also be available.
